PART |
Description |
Maker |
DTD743XE11 DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
2SC5585 |
Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
|
TY Semiconductor Co., Ltd
|
DTD713ZE09 DTD713ZETL |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
2SB1115A |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
CPH3101-TL-E |
Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single CPH3
|
ON Semiconductor
|
EN7364 |
Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single MCPH3
|
ON Semiconductor
|
CMLT591E |
SMD Small Signal Transistor PNP Low VCE(SAT) PNP Low VCE(Sat) 1.0 Amp transistor
|
CENTRAL[Central Semiconductor Corp]
|
TSB1184ACPS TSB1184A TSB1184ACP TSB1184ACPQ TSB118 |
Low Vce(sat) PNP Transistor 低Vce(sat)PNP晶体
|
Taiwan Semiconductor Co., Ltd. TSC[Taiwan Semiconductor Company, Ltd]
|
IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V,VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD Ultra-Low V IGBT with Diode
|
IXYS, Corp. IXYS Corporation
|